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The MOCVD of ZnO film grows technology
From;  Author:Stand originally
The semiconductor material with the wide direct unoccupied place area that ZnO is a glazed report, character that suppress report. It can be used at supersonic transducer, deflexion implement, smooth switch of spectrum analyzer high speed and small machine; High frequency filter; Ultraviolet domain of the photoelectricity such as detector, Laguang and canal of violet smooth glow or laser, parts of an apparatus that suppress report. This project is reaction source with Zn and O2, use special design, the form sediment of photograph of steam of organic compound of new-style MOCVD(metal that has cause of radio frequency plasma is accumulated) system, in Al2O3, Si, diamond / ZnO film grows on the underlay such as Si.



ZnO is one kind has the stuff of unoccupied place semiconductor of wide direct area that presses report and photoelectricity character, it can be used at supersonic transducer, deflexion implement, smooth switch of spectrum analyzer, high speed and small machine; High frequency filter; Ultraviolet the respect such as detector, Laguang and canal of violet smooth glow or laser. These parts of an apparatus in high capacity, high speed cent answer uses the wave of fiber-optic communication, fiber-optic and phasic modulation, turn over radar trends to measure listen, mobile of electronic monitor, satellite, collateral smooth information processing civil reach martial domain to have important applying. Accordingly, the development of ZnO material and parts of an apparatus and apply sure meeting to have main effect to the development of national economy.



Brief technology

The room temperature optical pump that reported ZnO film first from 1996 is stimulated outside Pu Zi shoot up to now, a few short years the research of a ZnO already obtained greater progress, the research of the parts of an apparatus such as parts of an apparatus of sound wave of the growth that the limits of research already covered the material such as line of dot of ZnO body single crystal, filmy, quanta, quanta and character and ZnO sensor, surface, detector and glow canal and laser and make wait for a respect. But, in October 2002, on the meeting of ZnO international learning that holds in the United States, each country scholar reachs unanimous verdict is: Preparation of filmy material of the P that the stability with authentic neither one returns on international at present ZnO is successful. Accordingly, capture P ZnO is the main task that places scientist of alive bound each country at present, it is the difficulty that parts of an apparatus of knot of P-n of development report infuse ZnO must resolve.



The growth of ZnO filmy material the method has evaporate, magnetism accuses to splash shoot, form sediment of laser of ionic Shu Jianshe, pulse is accumulated (form sediment of photograph of steam of organic compound of PLD) , metal is accumulated (MOCVD) , element bundle denotative (MBE) etc. Among them the ZnO filmy quality that MBE and MOCVD law grow is higher, pure from grow look on quality, MBE method may return MOCVD of summary prep above. But, the experience that according to GaN material and blue smooth glow the canal is developed and produces looks, the function of the photoelectricity parts of an apparatus or appliance that the material that grows with MBE makes is inferior to the material that MOCVD grows however.
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